By A. Goldmann (auth.), A. Goldmann, E.-E. Koch (eds.)
Photoelectron spectroscopy has matured significantly over the past decade. The experimental recommendations have been superior impressively, and a deeper theoretical perception into the underlying mechanisms of photoemission can be accomplished. It appeared that it was once time to take inventory of what has been comprehensive to date. the gathering of tables and diagrams given during this quantity is a contribution to a bigger programme aiming at a serious, and as finished as attainable, tabulation of digital constitution details acquired through electron and photon spectroscopy. No such selection of photoelectron spectra and comparable facts exists at this time, and the editors desire to fill a necessity of either experimentalists and theoreticians in quite a few fields of sturdy kingdom learn. The coverage for this quantity used to be to provide, in addition to the photoelectron effects, additionally a constrained set of alternative information (like lattice constants and paintings features) helpful within the context of band constitution info. in regards to the volume of accessible facts and as a way to accelerate e-book, it appeared essential to divide quantity III/23 into subvolumes a and b. The chapters of the current quantity III/23a were revealed as every one writer accomplished his contribution. The order of the chapters is hence chronological instead of thematic. Subvolume b is in education and may look in due course.
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Extra resources for Subvolume A
Snd of N (b). Dashed lines calculated, shifted to higher energcs by 3 eV [79T2]; solid lines experimental [68Fl]. 4 eV (300 K) [83K3] BP seems to be an indirect gap semiconductor. The maximum of the valence band is situated at the r point of the BZ. The conduction band minima are according to [72Hl] at the X points. 04 eV, see Fig. 56. Dielectric constant: E= 11 (300 K) [76Tl] For Fig. 56, see next page. 5 I 0 I I I I I I 5 10 15 20 nw - 25 30 I 35 eV Fig. 57. BP. Diffuse reflection spectrum at RT [83K2].
63 ... 5) Lys-L; Ml Ml MO MO Ml MO ... 46 . 0) A;-A; G,s-L”, *) Reflectivity measurement [66Cl]. “) Electroreflectance measurement [7OP2]. For critical-point energies measured by ellipsometry, see [SSVl]. 5 a-Sn (Grey tin) 26 4 eV [Ref. p. 103 a-Sn 0 -------- -4 I -2 Let -6 1 A I- A X U,K X l- k Fig. 36. a-Sn. Calculated band structure from [76Cl]. The + symmetry labels are from [66Cl]. 6 Fig. 39. a-Sn. Comparison of the non-local pseudopotential band structure from [76Cl] with experimental band structure of a-Sn(lO0) for kl along TX and TL [83H4], [85Hll.
14 GaP (Gallium phosphide) Ref. D. 5 1. 5 ev 7 liUJ- Fig. 66. AlSb. Partial yield vs. photon energy (a) at the Sb(4d) absorption edge (E,= 10 eV) and (b) at the Al(2p) absorption edge (E,=4 eV) [SSJl]. ,: spin-orbit splitting energy. 45 A [80B2] Work-function: 4 (110) depends strongly on doping and surface quality [84Pl]. r. r. 14 GaP (Gallium phosphide) [Ref. p. 103 Table 15. Gap. Empirical nonlocal pseudopotential energy eigenvalues and experimental data for critical points. The spin-orbit splitting is ignored in the calculation.