Silicon-on-Insulator (SOI) Technology: Manufacture and by Oleg Kononchuk, Bich-Yen Nguyen (Eds.)

By Oleg Kononchuk, Bich-Yen Nguyen (Eds.)

Silicon-On-Insulator (SOI) know-how: Manufacture and Applications covers SOI transistors and circuits, manufacture, and reliability. The publication additionally seems at purposes reminiscent of reminiscence, strength units, and photonics.

The e-book is split into components; half one covers SOI fabrics and manufacture, whereas half covers SOI units and functions. The booklet starts with chapters that introduce ideas for production SOI wafer expertise, homes of complex SOI fabrics, and modeling short-channel SOI semiconductor transistors. either partly depleted and completely depleted SOI applied sciences are thought of. Chapters 6 and seven trouble junctionless and fin-on-oxide box impact transistors. The demanding situations of variability and electrostatic discharge in CMOS units also are addressed. Part two covers fresh and tested applied sciences. those contain SOI transistors for radio frequency purposes, SOI CMOS circuits for ultralow-power functions, and bettering gadget functionality by utilizing 3D integration of SOI built-in circuits. eventually, chapters thirteen and 14 examine SOI know-how for photonic built-in circuits and for micro-electromechanical structures and nano-electromechanical sensors.

The broad assurance supplied by way of Silicon-On-Insulator (SOI) Technology makes the publication a critical source for these operating within the semiconductor undefined, for circuit layout engineers, and for teachers. it's also vital for electric engineers within the car and purchaser electronics sectors.

  • Covers SOI transistors and circuits, in addition to production approaches and reliability
  • Looks at functions similar to reminiscence, energy units, and photonics

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Additional info for Silicon-on-Insulator (SOI) Technology: Manufacture and Applications

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E. room temperature implantation). 1 As-implanted silicon When implanted in these conditions, hydrogen ions are incorporated individually in the silicon matrix, and so the question of their location and effect on the crystal immediately arises. Several studies have been performed using a variety of nanometer-scale characterization tools. 86 Incorporation of the hydrogen induces a volume expansion of the silicon crystal located around the projected range of the ions. Due to the underlying bulk silicon crystal, this expansion is restricted to the normal direction, but the in-plane stress induced by implantation is visible, for example, through wafer bending.

These basic mechanisms are illustrated below for the case of SOI structures. 4 SOI wafer structures and characterization The specific characteristics of SOI structures are determined by several parameters, such as the wide range of Si or BOX layer thickness, multiple Si–SiO2 interfaces, specific film defects and stress effects. Depending Materials and manufacturing techniques for SOI wafers 11 on the manufacturing process, SOI layer thicknesses may range from several micrometers, as for MEMS applications, to a few nanometers, as for advanced CMOS.

2 0. 63 nm. 6 Characterization of direct bonding mechanisms Most characterization of surfaces prior to bonding and on bonded structures is done to evaluate both the strength and the quality of the bonded structures. It also helps in developing an understanding of bonding mechanisms, as described below for silicon and silicon oxide bonding. 1 Bonding defect characterization Silicon bonding defect characterization is usually performed using infrared cameras, because silicon is transparent at wavelengths of λ > 1 μm (Fig.

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