Foundations of measurement, vol.1: Additive and polynomial by Krantz D.H., et al.

By Krantz D.H., et al.

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24) Panel II φ = 127◦ 17 . 24 Panel II Basics of Particle Optics and Spectroscopy Panel II Fig. 7 Schematic plot of a high-resolution electron energy loss spectrometer consisting of a cathode system (filament with lens system), a monochromator (cylindrical sectors), a similar analyzer and a detector. The monochromator can be rotated around an axis through the sample surface. The whole set up is mounted on a UHV flange The final current density at the exit, then follows as jf ∝ ji E ∝ ( E)5/2 . 25) This dependence, which is confirmed well by experiment, causes a strong reduction of the transmitted current with narrower entrance slits.

1–1 µm/h. This corresponds to an arrival rate F at the substrate of 1015 –1016 molecules/(s cm2 ). 4 Evaporation and Molecular Beam Epitaxy (MBE) 39 Fig. 2 Melting temperature Tm for selected materials, and crucible source (Knudsen type) temperature TS necessary to establish an equilibrium vapor pressure P (TS ) of 10−2 Torr. This pressure is convenient to achieve reasonable evaporation rates in MBE Material Melting temp. Tm [°C] Source temp. 5) to be in the range 10−2 –10−3 Torr. The temperatures needed to establish a pressure of 10−2 Torr in the cell can be evaluated from the vapor pressure plots in Fig.

According to Fig. 5. 15 eV for AlAs (indirect gap). According to Fig. 12 other III–V alloys suitable for good heteroepitaxial growth in MBE are AlP/GaP and AlSb/GaSb. , InP/CdS or InSb/PbTe/CdTe. Interesting heteroepitaxy is also possible for elemental semiconductors on III–V compounds, and vice versa. , for Ge on GaAs and Si on GaP (Fig. 12). On GaAs(110) surfaces cleaved in UHV Ge grows epitaxially at substrate temperatures above 300 °C. Below this temperature the deposited Ge layer is polycrystalline.

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