By Tony Chan Carusone, David A. Johns, Kenneth W. Martin
The 2d variation of Analog built-in Circuit Design makes a speciality of extra assurance approximately different types of circuits that experience elevated in value long ago decade. moreover, the textual content is greater with fabric on CMOS IC equipment modeling, up to date processing structure and multiplied insurance to mirror technical suggestions. CMOS units and circuits have extra impact during this version in addition to a discounted volume of textual content on BiCMOS and bipolar info. New chapters comprise themes on frequency reaction of analog ICs and simple idea of suggestions amplifiers.
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Additional info for Analog Integrated Circuit Design (2nd Edition)
7 mA/V which translates to a value of 2 μ n C ox = 270 μA/V . 74) is derived without considering channel-length modulation. However, these values are very useful during design for quickly and roughly estimating the device sizes, currents and voltages required to obtain a desired g m. The second voltage-controlled current-source in Fig. 17, shown as g s v s , models the body effect on the small-signal drain current, id. When the source is connected to small-signal ground, or when its voltage does not change appreciably, then this current source can be ignored.
2 19 MOS Transistors V G >> V tn VS = 0 VD > 0 Depletion region n+ n+ Increasing x Q n ( 0 ) = C ox ( V GS – V tn ) Q n ( L ) = C ox ( V GD – V tn ) Q n ( x ) = C ox ( V GS – V ch ( x ) – V tn ) Fig. 11 The channel charge density for V DS > 0. As the drain-source voltage increases, the channel charge concentration decreases at the drain end. This decrease is due to the smaller gate-to-channel voltage difference across the thin gate oxide as one moves closer to the drain. In other words, since the drain voltage is assumed to be at a higher voltage than the source, there is an increasing voltage gradient from the source to the drain, resulting in a smaller gate-to-channel voltage near the drain.
60) V DS-sat = V GS – V tn = V eff The current travelling through the pinched-off channel region is saturated, similar to a gas under pressure travelling through a very small tube. If the drain-gate voltage rises above this critical pinch-off voltage of – V tn , the charge concentration in the channel remains constant (to a first-order approximation) and the drain current no longer increases with increasing VDS. The result is the current-voltage relationship shown in Fig. 14 for a given gate-source voltage.